FET100 "Origin and evolution of MOSFETs toward nanoelectronics"

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FET100 "Origin and evolution of MOSFETs toward nanoelectronics"


IEEE EDS – Sixth Mexico Technical Meeting 2025 (MTM_6-2025)
Mexico Chapter and CINVESTAV-IPN Student Branch Chapter
Center for Research and Advanced Studies of the National Polytechnic Institute 


The IEEE Electron Devices Society (EDS) Cinvestav Student Chapter, in collaboration with the Solid-State Electronics Section of Cinvestav, is pleased to invite you to the following IEEE EDS Distinguished Lecture.

The event is part of the global FET100 campaign, launched by IEEE EDS to celebrate the legacy and impact of the field-effect transistor and to promote knowledge and innovation in electronic devices.

It is open to all students, researchers, and professionals interested in electronic and solid-state devices.

The lecture will provide an overview of the historical development, technological milestones, and current trends of MOSFET devices — from their conceptual origin to advanced architectures like FinFETs and nanosheets — highlighting their pivotal role in modern electronics and digital systems.

Date and Time

Date: 29 Jul 2025Time: 02:00 PM CST to 03:30 PM CST

Location

  • This event has virtual attendance info. Please visit the event page to attend virtually.

Hosts

Registration

  • Starts 09 July 2025 12:00 AM CST
  • Ends 29 July 2025 09:00 PM CST
  • No Admission Charge

Speakers

PhD. Adelmo of Solid State Electronics Laboratory, Simón Bolívar University, Caracas, Venezuela
Topic: 

Origin and evolution of MOSFETs toward nanoelectronics


Agenda

MTM_6-2025 – Schedule

Time     Activity Speaker
14:00 – 14:10 Opening and Welcome Remarks Host and Facilitator
14:10 – 15:30 Origin and Evolution of MOSFETs Toward Nanoelectronics  PhD. Adelmo Ortiz-Conde

MTM_06-2025 is an IEEE-EDS-sponsored technical meeting. Co-sponsored by the Section of Solid-State Electronics at the Center for Research and Advanced Studies of the National Polytechnic Institute.




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